Contact Inquiries: Michele Durant, 310-317-5321
Technical Contact: Michael Delaney, 310-317-5587
March 22, 2005
For Immediate Release
LOS ANGELES, March 22, 2005— HRL Laboratories, LLC in Malibu, CA has obtained a license from California Institute of Technology (CalTech) to sell millimeter-wave low noise and power monolithic microwave integrated circuits (MMICs) designed by Jet Propulsion Laboratory (JPL) personnel into the HRL indium phosphide high electron mobility transistor (HEMT) MMIC process. Fifteen unique MMIC designs are available from Ka-band to D-band to selected customers for millimeter wave (mmW) component prototyping. A partial list of the MMICs and typical performance are provided below.
Three power amplifier MMICs – LSPA1, LSPA2, and LSPA165 – cover mmW bands from 70-170 GHz. The LSPA1 MMIC design provides up to 15 dBm of output power from 70–120 GHz with 11 dB gain. The LSPA2 MMIC design provides higher gain over a narrower bandwidth with 13 dB of gain and 17 dBm output power from 75–110 GHz. The LSPA165 MMIC provides greater than 10 dB of gain and 12 dBm of output power from 140–170 GHz.
Three low noise amplifier MMICs – 40LN5, 118LN3, and 200LN2 – cover a significant portion of mmW bands from 25–205GHz. The 40LN5 MMIC provides greater than 20 dB gain from 26–50 GHz with noise figure less than 2.5 dB. The 118LN3 MMIC provides greater than 18 dB of gain from 70–125 GHz with less than 3 dB noise figure at 90 GHz. The 200LN2 MMIC provides greater than 17 dB of gain from 150–205 GHz.
Three wideband amplifier MMICs – WBA5A, WBA7M, and WBA11H – are also available. The WBA5A provides greater than 20 dB gain from 0.5–25 GHz. The WBA7M provides a positive gain slope from 1–50 GHz with greater than 25 dB gain at 50 GHz. The WBA11H provides greater than 30dB of gain from 70–110 GHz.
HRL has been offering discrete InP HEMT devices and MMICs, MMIC design services, and InP HEMT MMIC foundry service for the past seven years to selected customers. HRL now offers several versions of the InP HEMT process, fabricated on three-inch InP substrates, with gate lengths down to Lg = 0.08 micrometers.
HRL Laboratories, LLC is a corporate R&D laboratory that develops and produces InP HEMT MMICs for such millimeter-wave applications as power amplifiers and low noise amplifiers for its LLC Member Companies (Boeing, General Motors, and Raytheon), for the US Government, and for other commercial entities.
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