microelectronics Lab (MEL)
HRL's Microelectronics Laboratory has a team of talented and
and scientists focused
on advancing the state of the art in ultra-high-performance integrated
circuits. Innovations in materials, device physics, wafer fabrication
at nanometer dimensions, integrated circuit design, and subsystem
architecture have enabled the realization of miraculous new technologies.
MEL researchers are exploiting advances in analog signal processing, sampling theory, hybrid analog/digital computing, and analog VLSI circuits to develop novel analog processing approaches for advanced military and commercial systems. The goal is to achieve low-cost, low-power, chip-scale RF transceivers, sensor systems, and analog processor devices.
In the realm of digital mixed-signal ICs, MEL has been breaking new ground to enhance system and subsystem impact. High-performance indium phosphide (InP) heterojunction bipolar transistor (HBT) technology continues to be a key area of expertise, with researchers rapidly developing expertise in both silicon (CMOS) IC design and integration of InP HBT technology with CMOS.
The Microelectronics Laboratory has also made significant progress in the area of gallium nitride (GaN) heterostructure field effect transistor (HFET) technology for both power electronics applications and high-performance monolithic millimeter-wave integrated circuits (MMICs). We were the first organization in the world to demonstrate a W-band GaN MMIC power amplifier.
HRL also continues to be a leader in low-noise MMICs for radiometers, which are used in millimeter-wave imaging systems for navigation through fog and concealed weapons detection. In 2008, MEL researchers also made a major breakthrough in developing the world's first RF graphene field effect transistor.
- Research Staff, Test and Reliability - 1131.01
- Research Staff, Gallium Nitride Power Electronic Devices - 1131.09
- Research Staff - 1231.06
- Senior R&D Specialist - 1231.07
- Development Engineer, GaN Post Processing - 1231.13
- Senior Research Staff - 1231.22
- Development Engineer, Sr. - Etch (2nd shift) - 1331.10
- Engineering Specialist - 1331.15
- Research Staff, Thin Film Devices - 1331.20
- Development Engineer, RF GaN Process and Layout - 1331.21
- Section Leader, Post Processing - 1331.23
- Research Staff, Electron Beam Lithography - 1331.24
- Research Staff, Graphene - 1331.26
- Research Staff, Nanoelectronics - 1431.01
Areas of Research
- Asynchronous Pulse Processing (low-power, high-performance analog signal processing) for RF Transmitters and Receivers
- GaN HFET Technology for Millimeter-Wave Power Amplifiers
- Power Conversion Based on GaN HFET Switches and Diodes
- Integration of High-Performance III-V Technology with Silicon CMOS
- Analog-to-Digital Converters Based on InP HBT Technology
- Direct Digital Synthesis Based on InP HBT Technology
- Low-Noise InP HEMT and Sb Diode MMICs for Millimeter-Wave Imaging
- Millimeter-Wave Imaging System Analysis
- Graphene-Based Electronics
- 3D GaN MMIC Technology
- W-Band Sensor Modules
- Wide Bandgap Power Electronics
- W-Band, V-Band and D-Band Power Sources