microelectronics Lab (MEL)

HRL's Microelectronics Laboratory has a team of talented and motivated engineers and scientists focused on advancing the state of the art in ultra-high-performance integrated circuits. Innovations in materials, device physics, wafer fabrication at nanometer dimensions, integrated circuit design, and subsystem architecture have enabled the realization of miraculous new technologies.

MEL researchers are exploiting advances in analog signal processing, sampling theory, hybrid analog/digital computing, and analog VLSI circuits to develop novel analog processing approaches for advanced military and commercial systems. The goal is to achieve low-cost, low-power, chip-scale RF transceivers, sensor systems, and analog processor devices.

In the realm of digital mixed-signal ICs, MEL has been breaking new ground to enhance system and subsystem impact. High-performance indium phosphide (InP) heterojunction bipolar transistor (HBT) technology continues to be a key area of expertise, with researchers rapidly developing expertise in both silicon (CMOS) IC design and integration of InP HBT technology with CMOS.

The Microelectronics Laboratory has also made significant progress in the area of gallium nitride (GaN) heterostructure field effect transistor (HFET) technology for both power electronics applications and high-performance monolithic millimeter-wave integrated circuits (MMICs). We were the first organization in the world to demonstrate a W-band GaN MMIC power amplifier.

HRL also continues to be a leader in low-noise MMICs for radiometers, which are used in millimeter-wave imaging systems for navigation through fog and concealed weapons detection. In 2008, MEL researchers also made a major breakthrough in developing the world's first RF graphene field effect transistor.

Current Openings

• Research Staff, Mixed Signal Integrated Circuits - 0931.06
• Research Staff, Mixed Signal Integrated Circuits - 0931.10
• Research Staff, Test and Reliability - 1131.01
• MBR Computing Staff Engineer Sr. - CAD Applications Support - 1131.07
• Research Staff, Gallium Nitride Power Electronic Devices - 1131.09
• Research Staff, Advanced MMIC Designer-III-V and CMOS/SiGe Technologies - 1131.11
• Development Engineer, RF GaN Testing - 1231.03
• Research Staff - 1231.06
• Senior R&D Specialist - 1231.07
• Development Engineer, GaN Post Processing - 1231.13
• Development Engineer Sr. - 1231.18
• Development Engineer Sr. - 1231.19
• Research Staff - 1231.20
• Senior Research Staff - 1231.22
• Senior R&D Specialist - 1231.23
• Research Staff, Advanced Packaging - 1231.26
• Engineering Specialist - 1331.01
• Development Engineer Sr. - 1331.05
• Development Engineer - 1331.06
• Development Engineer Sr. - 1331.07
• Development Engineer, Advanced Packaging - 1331.08
• Development Engineer, Sr. - 1331.09
• Development Engineer, Sr. - Etch (2nd shift) - 1331.10
• Development Engineer, Sr. - 1331.11
• Development Engineer, Sr. - 1331.12
• Development Engineer, Sr. - 1331.13
• Development Engineer, RF GaN Technologies - 1331.14

Internships

• Contract - Tech Professional - HK10134