HRL Laboratories Establishes Center for Additive Materials

Center will focus on breakthrough 3D printing technologies in ceramics and metallurgy. HRL Laboratories, LLC, has established a Center for Additive Materials to accelerate development of 3D printing of high-performance materials.

HRL Paper on Gallium Nitride Integrated Circuits Wins IEEE George E. Smith Award

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.