HRL will research Wafer Scale Infrared Detectors for DARPA

The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding to research novel ways to synthesize semiconductors for sensing in the infrared spectrum, and methodologies to cost effectively integrate the infrared materials with silicon read-out integrated circuits (ROIC).

HRL Laboratories team publishes Quantum Computing Materials paper in MRS Bulletin

An HRL Laboratories, LLC, research team has published a paper in the March issue of MRS Bulletin, a journal of the Materials Research Society, that sits squarely at the intersection of materials science and quantum computing. The paper, “Metamorphic Materials for Quantum Computing,” explores the demands that silicon-germanium (SiGe) quantum dot heterostructures impose on the underlying substrate, the ways in which the metamorphic substrate’s properties impact device performance, and how performance limitations may be overcome.

HRL receives DARPA Award to “STAMP” learning into the brain

The Biological Technologies Office (BTO) of the Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding for a two-year project in the RAM Replay program to develop a man-portable system to boost learning during waking and memory consolidation during sleep, thereby increasing a person’s ability to quickly integrate and accurately recall information.

HRL Demonstrates the Potential to Enhance the Human Intellect’s Existing Capacity to Learn New Skills

Dr. Matthew Phillips and his team of investigators from HRL’s Information & System Sciences Laboratory used transcranial direct current stimulation (tDCS) in order to improve learning and skill retention. “We measured the brain activity patterns of six commercial and military pilots, and then transmitted these patterns into novice subjects as they learned to pilot an airplane in a realistic flight simulator,” he says.

HRL Laboratories’ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.