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Displaying news tagged: integrated circuit

HRL Paper on Gallium Nitride Integrated Circuits Wins IEEE George E. Smith Award

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.

HRL Laboratoriesâ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.