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Displaying news tagged: MEL

HRL Laboratoriesâ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.

HRL Laboratories Applauds Staff Members Honored by National Academy of Engineering

HRL Laboratories, LLC is pleased to announce that staff members Dr. Andrea Corrion and Dr. Kevin Geary have been invited to participate in the National Academy of Engineering’s (NAE) highly selective symposium, U.S. Frontiers of Engineering. According to the NAE, Corrion and Geary are among the nation’s brightest young engineers, 89 of whom will attend the symposium to discuss advances in four fields: optical and mechanical materials, natural disaster forecasting, cybersecurity, and the hunt for earth-like exoplanets.