Displaying news tagged: gallium nitride

Highest Speed GaN Electronics Racing to the Finish Line

HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.

Making DREaM Come True for DARPA

HRL Laboratories, LLC, has received an award from the Defense Advanced Research Project Agency (DARPA) to develop the next generation of gallium nitride (GaN) transistors with dramatically improved linearity and noise figure at reduced power consumption for use in electronic devices that manage the electromagnetic spectrum from radio communications to radar.

HRL Paper on Gallium Nitride Integrated Circuits Wins IEEE George E. Smith Award

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.