Displaying news tagged: gallium nitride

HRL Laboratories, LLC, is developing Efficient GaN Integrated G-band Monolithic Arrays (ENIGMA), a project funded by DARPA. ENIGMA will address a gap in technology between the compound semiconductor monolithic microwave integrated circuit industry and the silicon radio-frequency integrated circuit industry.

The New Monolithic Microwave Integrated Circuit Promises Disruptive Improvements in Radar, Communications, and Electronic Warfare

HRL Laboratories, LLC, will further its maturation of gallium nitride (GaN) semiconductor fabrication with a new award as part of the US Navy’s SOTA Radio Frequency Gallium Nitride “STARRY NITE” program. The $24M program is administered by the Naval Surface Warfare Center Crane Division and the National Security Technology Accelerator (NSTXL). The program will enable HRL to advance the manufacturing readiness level of its 40nm node T3 GaN process.

HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate wireless communications, high-resolution radar imaging, and many other defense and civilian applications.

HRL Laboratories scientists are aiming for a disruptive improvement in radar, electronic warfare, and communications capabilities they hope will be enabled by their new project. If they are successful, the W-band, nitrogen-polar gallium nitride low-noise amplifier could be the world’s first such device, launching a new generation of defense-oriented electronics applications with a possible improvement of 4 times the output power in W bands over HRL’s existing technology.

HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.

HRL Laboratories, LLC, has received an award from the Defense Advanced Research Project Agency (DARPA) to develop the next generation of gallium nitride (GaN) transistors with dramatically improved linearity and noise figure at reduced power consumption for use in electronic devices that manage the electromagnetic spectrum from radio communications to radar.

HRL Laboratories, LLC, announces a new shared foundry service, offering advanced millimeter-wave gallium nitride technology for fabrication of monolithic microwave integrated circuits through multi-project wafer runs.

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.

HRL has received an award from DARPA to develop and demonstrate high-efficiency MMICs for RF bands in the 50 to 110-GHz frequency range.