HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.
HRL Laboratories, LLC, has developed a miniaturized, low-power radar array that potentially can see weapons or explosives concealed on a person at tactically safe distances.
The Defense Advanced Research Project Agency (DARPA) announced an award to HRL Laboratories, LLC for the ASTIR program. The goal of ASTIR is to demonstrate a fundamentally new imaging radar architecture through basic research on “…innovative imaging radar architectures that can provide high frame-rate, three dimensional imaging of objects through adverse obscurants (fog, smoke, heavy rain, etc.) without requiring target or platform motion.”