HRL Laboratories, LLC, has developed a miniaturized, low-power radar array that potentially can see weapons or explosives concealed on a person at tactically safe distances.
HRL Laboratories, LLC, is celebrating its 20th anniversary as a limited liability company. On December 20, 1997, HRL became an LLC owned today by Boeing and General Motors.
John started his professional career at Hughes Aircraft Company in Los Angeles in 1966, where he participated in 5 years of lectures given by Nobel physics laureate Richard Feynman at the Hughes Research Labs (now HRL Laboratories) in Malibu, CA.
A team from HRL Laboratories, LLC, was among the winners of the 2017 R&D 100 Award, announced at the fourth annual R&D 100 Conference held November 16-17 in Orlando, FL.
A team from HRL’s Microelectronics Laboratory led by Jeong-Sun Moon has developed a linear wideband distributed amplifier circuit to enable clear, consistent communication between systems operating in some of the world’s most difficult situations.
HRL Laboratories, LLC, has announced the launch of its first podcast, HRL’s History of the Future, which will focus on the famed Hughes Research facility’s past and HRL’s present advancements in science and technology.
HRL Laboratories, LLC, has received an award to participate in project AMEBA, the Defense Advanced Research Project Agency (DARPA) initiative to develop low-frequency radio transmission antennas that are vastly more compact and efficient than the massive existing arrays used to communicate in traditionally radio-denied conditions, such as with submerged submarines.
HRL Laboratories, LLC, announced it has received an award from IARPA, within the Office of the Director of National Intelligence, to develop spherically curved short-wave (SWIR) and medium wave (MWIR) infrared image sensors.
Center will focus on breakthrough 3D printing technologies in ceramics and metallurgy. HRL Laboratories, LLC, has established a Center for Additive Materials to accelerate development of 3D printing of high-performance materials.
The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.