The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding to research novel ways to synthesize semiconductors for sensing in the infrared spectrum, and methodologies to cost effectively integrate the infrared materials with silicon read-out integrated circuits (ROIC).
An HRL Laboratories, LLC, research team has published a paper in the March issue of MRS Bulletin, a journal of the Materials Research Society, that sits squarely at the intersection of materials science and quantum computing. The paper, “Metamorphic Materials for Quantum Computing,” explores the demands that silicon-germanium (SiGe) quantum dot heterostructures impose on the underlying substrate, the ways in which the metamorphic substrate’s properties impact device performance, and how performance limitations may be overcome.
The Biological Technologies Office (BTO) of the Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding for a two-year project in the RAM Replay program to develop a man-portable system to boost learning during waking and memory consolidation during sleep, thereby increasing a person’s ability to quickly integrate and accurately recall information.
The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, $4.3 million to develop vibration- and shock-tolerant inertial sensor technology that enables future system accuracy needs without utilizing GPS.
HRL Laboratories, LLC, today announced that researchers in its Sensors and Materials Laboratory have developed an active variable stiffness vibration isolator capable of 100x stiffness changes and millisecond actuation times, independent of the static load.
Dr. Matthew Phillips and his team of investigators from HRL’s Information & System Sciences Laboratory used transcranial direct current stimulation (tDCS) in order to improve learning and skill retention.
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.
January 28 will mark the 30th anniversary of the day Americans looked to the sky and witnessed the unthinkable – the Space Shuttle Challenger lifting off and exploding a mere 73 seconds later, nine miles above the earth’s surface. Among the seven Challenger crewmembers who sacrificed their lives that day was Ron McNair, a former Hughes Research Laboratories physicist.
Researchers at HRL Laboratories, LLC, have achieved a new milestone in 3D printing technology by demonstrating an approach to additively manufacture ceramics that overcomes the limits of traditional ceramic processing and enables high temperature, high strength ceramic components.