Fast Track Your Innovation from Design to Chip
Apply Now for HRL’s T3L GaN MPW Access Program
HRL Laboratories, in partnership with the CA DREAMS hub, MOSIS2.0 and the MMEC hub, offers GaN designers an excellent opportunity to take part in our prototype accelerator program for subsidized access to HRL’s T3L GaN process technology. HRL is a pioneer in high frequency RF GaN process technologies. T3L GaN enables high-frequency MMICs for both transmit and receive applications with excellent linearity.
The Access Program offers successful applicants a wealth of resources via the MOSIS 2.0 storefront and the MOSIS 2.0 team will be available to onboard, train and guide designers in this cutting-edge process. EDA tool and cloud compute resources will be available through MMEC’s DESIGN ecosystem if needed.
The HRL T3L GaN MPW Access Program is in support of the broader ME Commons objectives of:
- Accelerating innovation
- Strengthening domestic design expertise
Apply now to accelerate your innovation. Secure subsidized access to HRL’s proprietary T3L GaN process and MOSIS 2.0’s storefront to take your project from concept to high-performance prototype.
Why participate
- Prototype new GaN technologies faster
- Access a state-of-the-art RF GaN process
- Strengthen U.S. design expertise and supply chains
- Create a path from research to production
Key details
📅 Application deadline
- May 1, 2026
💲Tile purchase fee
- $10,000
✔️ Eligibility
- Applicants must be U.S.-based
📧 How to apply
- Email GaNMPW (at) hrl (dot) com for application template and additional details
- The Foundry page has 3 forms that are required to get access to the PDK:
- NDA, Terms and Conditions, EULA
- State-of-the-art frequency performance
- Suitable for power and low-noise applications
- Optimized for high linearity
- Licensed to MACOM with a clear volume-production path
- Awards: June 5, 2026
- First designs due: September 4, 2026
- Die delivery: March 2027
- Deliver report: April 2027
- Feasibility of design goals and objectives
- Impact of the design objectives on the Defense Industrial Base
- Innovativeness and technical uniqueness
- Resources to successfully design and test
- Transition strategy toward real-world deployment
HRL RF GaN T3L Process
The T3L process uses a proprietary epitaxial structure and advanced gate design to deliver leading performance and reliability at millimeter-wave frequencies.
Process benefits:
Learn more about the T3L process here.
Expectations for winners
Review criteria
Applications will be reviewed based on:
About HRL
HRL Laboratories pioneers the next frontiers of physical and information science. Delivering transformative technologies in automotive, aerospace and defense, HRL advances the critical missions of its customers. As a private company owned jointly by Boeing and GM, HRL is a source of innovations that advance the state of the art in profound and far-reaching ways. Learn more




