Displaying news tagged: 5G

GaN Foundry Makes Big Impression with STARRY NITE

HRL Laboratories, LLC, will further its maturation of gallium nitride (GaN) semiconductor fabrication with a new award as part of the US Navy’s SOTA Radio Frequency Gallium Nitride “STARRY NITE” program. The $24M program is administered by the Naval Surface Warfare Center Crane Division and the National Security Technology Accelerator (NSTXL). The program will enable HRL to advance the manufacturing readiness level of its 40nm node T3 GaN process.

HRL Advances to Next Phase in DARPA DREaM Project for Ultra-linear High-speed GaN Transistors

At HRL Laboratories, LLC, a team led by Principal Investigator Dr. Jeong-Sun Moon is developing the next generation of gallium nitride (GaN) transistors that will have a dramatic effect on electronic components that amplify electromagnetic signals for communications, radar, and 5G wireless networks. The MMIC amplifiers that utilize these high-speed GaN transistors can see greatly improved linearity, noise reduction, and reduced power consumption.