HRL Laboratories, LLC, will further its maturation of gallium nitride (GaN) semiconductor fabrication with a new award as part of the US Navy’s SOTA Radio Frequency Gallium Nitride “STARRY NITE” program. The $24M program is administered by the Naval Surface Warfare Center Crane Division and the National Security Technology Accelerator (NSTXL). The program will enable HRL to advance the manufacturing readiness level of its 40nm node T3 GaN process.
HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate wireless communications, high-resolution radar imaging, and many other defense and civilian applications.
HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.
HRL Laboratories, LLC, announces a new shared foundry service, offering advanced millimeter-wave gallium nitride technology for fabrication of monolithic microwave integrated circuits through multi-project wafer runs.