Displaying news tagged: GaN
HRL Receives DARPA Award for High-Efficiency E-band GaN Power Amplifier
HRL has received an award from DARPA to develop and demonstrate high-efficiency MMICs for RF bands in the 50 to 110-GHz frequency range.
HRL Laboratories’ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.