Displaying news tagged: linearity

HRL Advances to Next Phase in DARPA DREaM Project for Ultra-linear High-speed GaN Transistors

At HRL Laboratories, LLC, a team led by Principal Investigator Dr. Jeong-Sun Moon is developing the next generation of gallium nitride (GaN) transistors that will have a dramatic effect on electronic components that amplify electromagnetic signals for communications, radar, and 5G wireless networks. The MMIC amplifiers that utilize these high-speed GaN transistors can see greatly improved linearity, noise reduction, and reduced power consumption.