HRL Laboratories, LLC, has received an award from the Defense Advanced Research Project Agency (DARPA) under the Magnetic, Miniaturized, and Monolithically Integrated Components (M3IC) program.
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.