HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate wireless communications, high-resolution radar imaging, and many other defense and civilian applications.
HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.
HRL Laboratories, LLC, announces a new shared foundry service, offering advanced millimeter-wave gallium nitride technology for fabrication of monolithic microwave integrated circuits through multi-project wafer runs.
HRL has received an award from DARPA to develop and demonstrate high-efficiency MMICs for RF bands in the 50 to 110-GHz frequency range.