HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.
HRL Laboratories, LLC, announces a new shared foundry service, offering advanced millimeter-wave gallium nitride technology for fabrication of monolithic microwave integrated circuits through multi-project wafer runs.