In an effort to electronically mimic neurons—the nerve cells of the brain—scientists from HRL Laboratories, LLC have successfully demonstrated novel electronic neuron circuits that exhibits as many as 23 known behaviors of biological neurons and the three classes of neuron activation (excitation) that code information between neurons about sensory events, cognitive processes, or motor actions.
An HRL Laboratories, LLC, research team has published a paper in the March issue of MRS Bulletin, a journal of the Materials Research Society, that sits squarely at the intersection of materials science and quantum computing. The paper, “Metamorphic Materials for Quantum Computing,” explores the demands that silicon-germanium (SiGe) quantum dot heterostructures impose on the underlying substrate, the ways in which the metamorphic substrate’s properties impact device performance, and how performance limitations may be overcome.
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.