Displaying news tagged: GaN

HRL Laboratories Ramps Up High-Speed Gallium Nitride Semiconductor Foundry

HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate wireless communications, high-resolution radar imaging, and many other defense and civilian applications.

HRL Laboratories Sets Sights on Next-Generation Defense Electronics With Advanced Semiconductor Material

HRL Laboratories scientists are aiming for a disruptive improvement in radar, electronic warfare, and communications capabilities they hope will be enabled by their new project. If they are successful, the W-band, nitrogen-polar gallium nitride low-noise amplifier could be the world’s first such device, launching a new generation of defense-oriented electronics applications with a possible improvement of 4 times the output power in W bands over HRL’s existing technology.

HRL Advances to Next Phase in DARPA DREaM Project for Ultra-linear High-speed GaN Transistors

At HRL Laboratories, LLC, a team led by Principal Investigator Dr. Jeong-Sun Moon is developing the next generation of gallium nitride (GaN) transistors that will have a dramatic effect on electronic components that amplify electromagnetic signals for communications, radar, and 5G wireless networks. The MMIC amplifiers that utilize these high-speed GaN transistors can see greatly improved linearity, noise reduction, and reduced power consumption.

Highest Speed GaN Electronics Racing to the Finish Line

HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.

Making DREaM Come True for DARPA

HRL Laboratories, LLC, has received an award from the Defense Advanced Research Project Agency (DARPA) to develop the next generation of gallium nitride (GaN) transistors with dramatically improved linearity and noise figure at reduced power consumption for use in electronic devices that manage the electromagnetic spectrum from radio communications to radar.

HRL Paper on Gallium Nitride Integrated Circuits Wins IEEE George E. Smith Award

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.

HRL Laboratories breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.