HRL Laboratories, LLC, will further its maturation of gallium nitride (GaN) semiconductor fabrication with a new award as part of the US Navy’s SOTA Radio Frequency Gallium Nitride “STARRY NITE” program. The $24M program is administered by the Naval Surface Warfare Center Crane Division and the National Security Technology Accelerator (NSTXL). The program will enable HRL to advance the manufacturing readiness level of its 40nm node T3 GaN process.
HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate wireless communications, high-resolution radar imaging, and many other defense and civilian applications.
HRL Laboratories scientists are aiming for a disruptive improvement in radar, electronic warfare, and communications capabilities they hope will be enabled by their new project. If they are successful, the W-band, nitrogen-polar gallium nitride low-noise amplifier could be the world’s first such device, launching a new generation of defense-oriented electronics applications with a possible improvement of 4 times the output power in W bands over HRL’s existing technology.
At HRL Laboratories, LLC, a team led by Principal Investigator Dr. Jeong-Sun Moon is developing the next generation of gallium nitride (GaN) transistors that will have a dramatic effect on electronic components that amplify electromagnetic signals for communications, radar, and 5G wireless networks. The MMIC amplifiers that utilize these high-speed GaN transistors can see greatly improved linearity, noise reduction, and reduced power consumption.
HRL Laboratories has received a DARPA award to significantly advance the technology and manufacturing readiness levels of its leading-edge T3 GaN technology. Integrated circuits made by layering GaN onto silicon carbide substrate wafers offer the best combination of efficiency, output power, and survivability among radio frequency and millimeter-wave semiconductor technologies.
HRL Laboratories, LLC, has received an award from the Defense Advanced Research Project Agency (DARPA) to develop the next generation of gallium nitride (GaN) transistors with dramatically improved linearity and noise figure at reduced power consumption for use in electronic devices that manage the electromagnetic spectrum from radio communications to radar.
HRL Laboratories, LLC, announces a new shared foundry service, offering advanced millimeter-wave gallium nitride technology for fabrication of monolithic microwave integrated circuits through multi-project wafer runs.
The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.
HRL has received an award from DARPA to develop and demonstrate high-efficiency MMICs for RF bands in the 50 to 110-GHz frequency range.
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.