HRL researchers originally made headlines with a famous image of a metal microlattice structure resting atop an unaffected dandelion. Now the material has been vetted and confirmed by the Guinness book as having no peer among metals when it comes to weight.
The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, $ 1.5 million to develop an ultra-low power oven controlled crystal oscillator (OCXO) for use as a frequency reference for new high-performance, low-power atomic clocks.
The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding to research novel ways to synthesize semiconductors for sensing in the infrared spectrum, and methodologies to cost effectively integrate the infrared materials with silicon read-out integrated circuits (ROIC).
An HRL Laboratories, LLC, research team has published a paper in the March issue of MRS Bulletin, a journal of the Materials Research Society, that sits squarely at the intersection of materials science and quantum computing. The paper, “Metamorphic Materials for Quantum Computing,” explores the demands that silicon-germanium (SiGe) quantum dot heterostructures impose on the underlying substrate, the ways in which the metamorphic substrate’s properties impact device performance, and how performance limitations may be overcome.
The Biological Technologies Office (BTO) of the Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding for a two-year project in the RAM Replay program to develop a man-portable system to boost learning during waking and memory consolidation during sleep, thereby increasing a person’s ability to quickly integrate and accurately recall information.
The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, $4.3 million to develop vibration- and shock-tolerant inertial sensor technology that enables future system accuracy needs without utilizing GPS.
HRL Laboratories, LLC, today announced that researchers in its Sensors and Materials Laboratory have developed an active variable stiffness vibration isolator capable of 100x stiffness changes and millisecond actuation times, independent of the static load.
Dr. Matthew Phillips and his team of investigators from HRL’s Information & System Sciences Laboratory used transcranial direct current stimulation (tDCS) in order to improve learning and skill retention.
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.