HRL Laboratories’ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.



Breakthrough achieved in Ceramics 3D Printing Technology

Researchers at HRL Laboratories, LLC, have achieved a new milestone in 3D printing technology by demonstrating an approach to additively manufacture ceramics that overcomes the limits of traditional ceramic processing and enables high temperature, high strength ceramic components.


HRL Passes Milestone with 1,001 Patents

Many New Year’s resolutions are abandoned come mid-January, but HRL Laboratories, LLC, succeeded in its quest to acquire more than 100 patents in 2015. As a result, the research and development company recently celebrated the acquisition of its 1001st patent.


HRL Laboratories Developing Nanoscale Fabrication Technology for Large-Scale Performance

Funded under the Atoms to Product (A2P) program through the Defense Advanced Research Projects Agency (DARPA) and the Air Force Research Laboratory (AFRL), HRL’s Billion particle per second Nanoparticle Assembly project will develop processes to assemble nanoscale materials into forms that are compatible with existing manufacturing technologies.


Lightest. Metal. Ever.

Boeing features HRL Laboratories in this video about the Microlattice, the lightest metallic structure ever made. At 99.99% air, it’s light enough to balance on top of a dandelion, while its structure makes it strong. Strength and record breaking lightness make it a potential metal for future planes and vehicles.